| PART |
Description |
Maker |
| RFP-250375N6X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-250250N6X50-2 |
Aluminum Nitride Terminations 40 Watts, 50ohm
|
Anaren Microwave
|
| AML59P4512 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPTB00004 |
Gallium Nitride 28V, 5W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
|
| NPTB00025 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
| NPT1012 NPT1012-15 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| NPT35015 |
Gallium Nitride 28V, 18W RF Power Transistor
|
M/A-COM Technology Solution...
|
| NPA1003 NPA1003-15 |
Gallium Nitride 28V, 5W, 20-1500 MHz MMIC Amplifier
|
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| NPT2018 NPT2018-15 |
Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT
Industry Standard Plastic Package
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| TCD-2008B50J-G |
Chip Terminations
|
American Accurate Components, Inc.
|
| MFE211 MFE212 |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
